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1. Identity statement
Reference TypeConference Abstract (Conference Proceedings)
Sitemtc-m21b.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier8JMKD3MGP3W34P/3PGF6FS
Repositorysid.inpe.br/mtc-m21b/2017/08.25.17.28
Last Update2017:12.21.15.45.21 (UTC) simone
Metadata Repositorysid.inpe.br/mtc-m21b/2017/08.25.17.28.59
Metadata Last Update2018:06.04.02.27.45 (UTC) administrator
Secondary KeyINPE--PRE/
Citation KeyNakamatsuPeSoOkFoRaAb:2017:InTrPr
TitleInvestigation of transport properties on PbTe/Pb1-xSnxTe heterostructures
Year2017
Access Date2024, May 18
Secondary TypePRE CN
Number of Files1
Size2022 KiB
2. Context
Author1 Nakamatsu, Sandra
2 Peres, Marcelos L.
3 Soares, Demétrio A. W.
4 Okassaki, Anderson K.
5 Fornari, Celso Israel
6 Rappl, Paulo Henrique de Oliveira
7 Abramof, Eduardo
Resume Identifier1
2
3
4
5
6 8JMKD3MGP5W/3C9JJ37
7 8JMKD3MGP5W/3C9JGUH
Group1
2
3
4
5 CMS-ETES-SESPG-INPE-MCTIC-GOV-BR
6 LABAS-COCTE-INPE-MCTIC-GOV-BR
7 LABAS-COCTE-INPE-MCTIC-GOV-BR
Affiliation1
2
3
4
5 Instituto Nacional de Pesquisas Espaciais (INPE)
6 Instituto Nacional de Pesquisas Espaciais (INPE)
7 Instituto Nacional de Pesquisas Espaciais (INPE)
Author e-Mail Address1
2
3
4
5 celso.fornari@inpe.br
6 paulo.rappl@inpe.br
7 eduardo.abramof@inpe.br
Conference NameBrazilian Workshop on Semiconductor Physics, 18 (BWSP)
Conference LocationMaresias, SP
Date14-18 ago.
Book TitleResumos
History (UTC)2017-08-25 17:29:28 :: simone -> administrator :: 2017
2018-01-09 11:47:08 :: administrator -> simone :: 2017
2018-01-09 18:25:52 :: simone -> administrator :: 2017
2018-06-04 02:27:45 :: administrator -> simone :: 2017
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Version Typepublisher
AbstractPbTe compounds have been used for the development of infrared photodetectors and diode lasers [1] over the decades. Introduction of Sn atoms makes this material even more interesting for practical applications as well as from the basics physics point of view. According to the band inversion model, the gap of Pb1-xSnxTe decreases as Sn composition increases, and vanishes for an intermediate alloy composition. Further increasing of Sn concentration leads to the band inversion and the energy gap starts to increase up to the SnTe value. Very recently, it was discovered that in the region of band inversion, transition from metallic to crystalline topological insulator (TCI) occurs [3]. Recent theoretical work demonstrated that the PbTe/Pb1-xSnxTe heterostructures can present topological states in the interface of the heterojunction. Such an interface of PbTe and Pb1−xSnxTe, at which four Dirac cones appear, is analogous to the surface of a weak TI [4]. In this work we perform electrical characterization in PbTe/Pb1-xSnxTe films for different values of x close to the band inversion in order to verify the existence a single gapless helical state in the [111] direction at the heterostructure interface. Morfological characterization will also be performed in order to provide a detailed view of these new structures. We hope that this work contribute to a better comprehension of the nature of topological insulators based on IV-VI compounds. Acknowledgments: The authors would like to acknowledge CAPES and FAPEMIG for support. References: [1] I. U. Arachchige and M. G. Kanatzidis, Nano Lett. 9 (4), 1583 (2009); [2] R. Jaramillo et al, Jour. Appl. Phys. 119, 035101 (2016); [3] P. Dziawa, Nature Materials 11, 1023 (2012).
AreaFISMAT
Arrangement 1urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Investigation of transport...
Arrangement 2urlib.net > BDMCI > Fonds > Produção pgr ATUAIS > CMS > Investigation of transport...
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4. Conditions of access and use
data URLhttp://mtc-m21b.sid.inpe.br/ibi/8JMKD3MGP3W34P/3PGF6FS
zipped data URLhttp://mtc-m21b.sid.inpe.br/zip/8JMKD3MGP3W34P/3PGF6FS
Languageen
Target Fileabramof_investigation.pdf
User Groupself-uploading-INPE-MCTI-GOV-BR
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Reader Groupadministrator
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Visibilityshown
Read Permissionallow from all
Update Permissionnot transferred
5. Allied materials
Linking8JMKD3MGP3W34P/3NAEMRH
Next Higher Units8JMKD3MGPCW/3ESR3H2
8JMKD3MGPCW/3F358GL
Citing Item Listsid.inpe.br/mtc-m21/2012/07.13.14.57.50 5
sid.inpe.br/mtc-m21/2012/07.13.14.44.57 4
Host Collectionsid.inpe.br/mtc-m21b/2013/09.26.14.25.20
6. Notes
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